Great efforts have been made to improve power switches – MOSFETs and IGBTs – to decrease forward voltage drop and as well as to decrease turn-off energy. In switching inductive loads, the turn-on ...

Infineon Technologies has unveiled a diode family designed for modern IGBT applications. The Infineon Prime Soft features an improved turn-off capability which now rates at 5 kA/µs. Prime Soft is ...

Fraunhofer IAF has developed a monolithic bidirectional switch with a blocking voltage of 1200 V using its GaN-on-insulator technology. The switch contains two free-wheeling diodes and can deliver ...

Fifth generation technology improves the characteristics of fourth generation IGBT and (free-wheeling diode) FWD devices, both switching behavior and electrical losses are improved. Furthermore, an ...

Infineon Technologies AG recently launched a 6.5 kV power module that features IGBT and freewheeling diode functionality integrated into a single chip. Infineon Technologies AG recently launched a 6.5 ...

During the last 10 years, power supply topology has undergone a basic change. Power supplies of all kinds are now constructed so that heavy and bulky 50/60 Hz mains transformers are no longer ...

Technological innovations in power electronics are not only essential for the success of the energy transition, they also provide sustainable support for economic development in Europe. The Fraunhofer ...