In this white paper, a gallium arsenide (GaAs) pseudomorphic high-electron mobility transistor (pHEMT) power amplifier (PA) design approach is examined from a systems perspective. It highlights the ...
The development of PHEMT, 24 to 31GHz 2W/4W power amplifier MMICs is described. The amplifier was designed with highly integrated distributed line-based low-loss power, combining design techniques ...
Miniaturization of consumer products, aerospace and defense systems, medical devices, and LED arrays has spawned the development of a technology known as the multi-chip module (MCM), which combines ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results