Laser-induced single event effects (SEE) and two-photon absorption (TPA) constitute a dynamic area of research aimed at replicating and understanding the transient disruptions in microelectronic ...
The Defense Advanced Research Projects Agency (DARPA) will host a Proposers Day in support of the Broad Agency Announcement (BAA) HR001123S0047, Advanced Sources for Single-event Radiation Testing ...
Why GaN components are highly resistant to radiation damage, such as total ionizing dose (TID), making GaN well-suited for harsh space environments. Why GaN devices remain vulnerable to single-event ...
Single event burnout (SEB) represents a critical failure mode in power semiconductor devices, whereby the impact of a single energetic particle – often encountered in space or high-radiation ...
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